Shape measurement apparatus and shape measurement method

−1 An apparatus and method are provided for measuring the end surface of a disk-shaped semiconductor wafer based on its projection image, without the influence of contaminants on the end surface. A rotation supporting mechanism supports a wafer between a first supporting position rotated by +δrelati...

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Hauptverfasser: Akamatsu, Masaru, Hashizume, Hidehisa, Nakai, Yasuhide
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creator Akamatsu, Masaru
Hashizume, Hidehisa
Nakai, Yasuhide
description −1 An apparatus and method are provided for measuring the end surface of a disk-shaped semiconductor wafer based on its projection image, without the influence of contaminants on the end surface. A rotation supporting mechanism supports a wafer between a first supporting position rotated by +δrelative to a predetermined reference position and a second supporting position rotated by −δdegrees at two or more supporting positions. An image sensor picks up a projection image of the wafer's end surface. An index value for the end surface is calculated for each of a plurality of obtained projection images. One representative value of the calculated index values or an aggregate value is obtained, and a shape measurement of the wafer's end surface corresponding to the reference supporting position is derived. When the wafer's radius and a chamfer width are set as r and k, δ≧cos((r-k)/r) is satisfied.
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title Shape measurement apparatus and shape measurement method
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