Plasma processing apparatus and electronic device manufacturing method

Plasma processing apparatus and electronic device manufacturing method

A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the cha...

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Hauptverfasser: Tanaka, Yoh, Konaga, Kazuya, Watanabe, Eisaku, Morimoto, Eitaro
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Sprache:eng
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Konaga, Kazuya
Watanabe, Eisaku
Morimoto, Eitaro
description A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the chamber by applying AC power to the chamber. The conductive members connect the substrate stage and the side wall of the chamber by surrounding the plasma space between the substrate stage and the electrode in plasma formation, and at least some of them are separated by being moved by a driving mechanism so as to form an opening for loading a substrate onto the substrate stage while no plasma is being formed. The deposition shield covers the surfaces of the conductive members on the side of the plasma space.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_08303785</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>08303785</sourcerecordid><originalsourceid>FETCH-uspatents_grants_083037853</originalsourceid><addsrcrecordid>eNqNyj0KAjEQBtA0FqLeYS4gLARxe3HZ0sJePpLZNZA_MhPPLwsewOo1b2-mR4QkUG3FsUjIK6FWNGgXQvbEkZ22koMjz5_gmBJyX-C0t20n1nfxR7NbEIVPPw-GpvvzNp-7VChnldfasDGMdrDX8WL_KF9DNzUr</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Plasma processing apparatus and electronic device manufacturing method</title><source>USPTO Issued Patents</source><creator>Tanaka, Yoh ; Konaga, Kazuya ; Watanabe, Eisaku ; Morimoto, Eitaro</creator><creatorcontrib>Tanaka, Yoh ; Konaga, Kazuya ; Watanabe, Eisaku ; Morimoto, Eitaro ; Canon Anelva Corporation</creatorcontrib><description>A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the chamber by applying AC power to the chamber. The conductive members connect the substrate stage and the side wall of the chamber by surrounding the plasma space between the substrate stage and the electrode in plasma formation, and at least some of them are separated by being moved by a driving mechanism so as to form an opening for loading a substrate onto the substrate stage while no plasma is being formed. The deposition shield covers the surfaces of the conductive members on the side of the plasma space.</description><language>eng</language><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8303785$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64015</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8303785$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tanaka, Yoh</creatorcontrib><creatorcontrib>Konaga, Kazuya</creatorcontrib><creatorcontrib>Watanabe, Eisaku</creatorcontrib><creatorcontrib>Morimoto, Eitaro</creatorcontrib><creatorcontrib>Canon Anelva Corporation</creatorcontrib><title>Plasma processing apparatus and electronic device manufacturing method</title><description>A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the chamber by applying AC power to the chamber. The conductive members connect the substrate stage and the side wall of the chamber by surrounding the plasma space between the substrate stage and the electrode in plasma formation, and at least some of them are separated by being moved by a driving mechanism so as to form an opening for loading a substrate onto the substrate stage while no plasma is being formed. The deposition shield covers the surfaces of the conductive members on the side of the plasma space.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNyj0KAjEQBtA0FqLeYS4gLARxe3HZ0sJePpLZNZA_MhPPLwsewOo1b2-mR4QkUG3FsUjIK6FWNGgXQvbEkZ22koMjz5_gmBJyX-C0t20n1nfxR7NbEIVPPw-GpvvzNp-7VChnldfasDGMdrDX8WL_KF9DNzUr</recordid><startdate>20121106</startdate><enddate>20121106</enddate><creator>Tanaka, Yoh</creator><creator>Konaga, Kazuya</creator><creator>Watanabe, Eisaku</creator><creator>Morimoto, Eitaro</creator><scope>EFH</scope></search><sort><creationdate>20121106</creationdate><title>Plasma processing apparatus and electronic device manufacturing method</title><author>Tanaka, Yoh ; Konaga, Kazuya ; Watanabe, Eisaku ; Morimoto, Eitaro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_083037853</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Tanaka, Yoh</creatorcontrib><creatorcontrib>Konaga, Kazuya</creatorcontrib><creatorcontrib>Watanabe, Eisaku</creatorcontrib><creatorcontrib>Morimoto, Eitaro</creatorcontrib><creatorcontrib>Canon Anelva Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tanaka, Yoh</au><au>Konaga, Kazuya</au><au>Watanabe, Eisaku</au><au>Morimoto, Eitaro</au><aucorp>Canon Anelva Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Plasma processing apparatus and electronic device manufacturing method</title><date>2012-11-06</date><risdate>2012</risdate><abstract>A plasma processing apparatus includes a chamber, substrate stage, electrode, conductive members, and deposition shield. The chamber is maintained at a predetermined potential. The substrate stage serves to hold a substrate within the chamber. The electrode serves to generate a plasma inside the chamber by applying AC power to the chamber. The conductive members connect the substrate stage and the side wall of the chamber by surrounding the plasma space between the substrate stage and the electrode in plasma formation, and at least some of them are separated by being moved by a driving mechanism so as to form an opening for loading a substrate onto the substrate stage while no plasma is being formed. The deposition shield covers the surfaces of the conductive members on the side of the plasma space.</abstract><oa>free_for_read</oa></addata></record>
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title Plasma processing apparatus and electronic device manufacturing method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T17%3A15%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Tanaka,%20Yoh&rft.aucorp=Canon%20Anelva%20Corporation&rft.date=2012-11-06&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E08303785%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true