Nonvolatile memory device

A nonvolatile memory device comprises a page buffer unit comprising page buffers, each coupling first and second input and output (IO) lines and a latch circuit for outputting data together or coupling a sense node and the first or second I/O line together, in response to an operation mode; a Y deco...

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creator Cho, Ho Youb
description A nonvolatile memory device comprises a page buffer unit comprising page buffers, each coupling first and second input and output (IO) lines and a latch circuit for outputting data together or coupling a sense node and the first or second I/O line together, in response to an operation mode; a Y decoder unit comprising decoders, each selecting one or more of the page buffers in response to address signals and outputting a first or second control signal to the selected page buffers in response to the operation mode; a mode selection unit outputting first and second operation selection signals for selecting the operation mode; and an I/O control unit comprising I/O control circuits, each detecting data, inputted and output through the first and second I/O lines, and outputting the detected data or coupling one of the first and second I/O lines to a data line.
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a Y decoder unit comprising decoders, each selecting one or more of the page buffers in response to address signals and outputting a first or second control signal to the selected page buffers in response to the operation mode; a mode selection unit outputting first and second operation selection signals for selecting the operation mode; and an I/O control unit comprising I/O control circuits, each detecting data, inputted and output through the first and second I/O lines, and outputting the detected data or coupling one of the first and second I/O lines to a data line.</description><language>eng</language><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8300460$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,777,799,882,64018</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8300460$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Cho, Ho Youb</creatorcontrib><creatorcontrib>SK hynix Inc</creatorcontrib><title>Nonvolatile memory device</title><description>A nonvolatile memory device comprises a page buffer unit comprising page buffers, each coupling first and second input and output (IO) lines and a latch circuit for outputting data together or coupling a sense node and the first or second I/O line together, in response to an operation mode; a Y decoder unit comprising decoders, each selecting one or more of the page buffers in response to address signals and outputting a first or second control signal to the selected page buffers in response to the operation mode; a mode selection unit outputting first and second operation selection signals for selecting the operation mode; and an I/O control unit comprising I/O control circuits, each detecting data, inputted and output through the first and second I/O lines, and outputting the detected data or coupling one of the first and second I/O lines to a data line.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZJD0y88ry89JLMnMSVXITc3NL6pUSEkty0xO5WFgTUvMKU7lhdLcDApuriHOHrqlxQWJJal5JcXx6UWJIMrAwtjAwMTMwJgIJQAbeSOs</recordid><startdate>20121030</startdate><enddate>20121030</enddate><creator>Cho, Ho Youb</creator><scope>EFH</scope></search><sort><creationdate>20121030</creationdate><title>Nonvolatile memory device</title><author>Cho, Ho Youb</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_083004603</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Cho, Ho Youb</creatorcontrib><creatorcontrib>SK hynix Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cho, Ho Youb</au><aucorp>SK hynix Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Nonvolatile memory device</title><date>2012-10-30</date><risdate>2012</risdate><abstract>A nonvolatile memory device comprises a page buffer unit comprising page buffers, each coupling first and second input and output (IO) lines and a latch circuit for outputting data together or coupling a sense node and the first or second I/O line together, in response to an operation mode; a Y decoder unit comprising decoders, each selecting one or more of the page buffers in response to address signals and outputting a first or second control signal to the selected page buffers in response to the operation mode; a mode selection unit outputting first and second operation selection signals for selecting the operation mode; and an I/O control unit comprising I/O control circuits, each detecting data, inputted and output through the first and second I/O lines, and outputting the detected data or coupling one of the first and second I/O lines to a data line.</abstract><oa>free_for_read</oa></addata></record>
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title Nonvolatile memory device
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