Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon

Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a prede...

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Bibliographische Detailangaben

Hauptverfasser:	Im, James S, Sposili, Robert S, Crowder, Mark A
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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