Semiconductor structures and methods of manufacturing the same
A semiconductor structure has embedded stressor material for enhanced transistor performance. The method of forming the semiconductor structure includes etching an undercut in a substrate material under one or more gate structures while protecting an implant with a liner material. The method further...
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| creator | Li, Xi Ontalus, Viorel C |
| description | A semiconductor structure has embedded stressor material for enhanced transistor performance. The method of forming the semiconductor structure includes etching an undercut in a substrate material under one or more gate structures while protecting an implant with a liner material. The method further includes removing the liner material on a side of the implant and depositing stressor material in the undercut under the one or more gate structures. |
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| source | USPTO Issued Patents |
| title | Semiconductor structures and methods of manufacturing the same |
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