Reprogrammable fuse structure and method

A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Burr, Geoffrey W, Kothandaraman, Chandrasekharan, Lam, Chung Hon, Liu, Xiao Hu, Rossnagel, Stephen M, Tyberg, Christy S, Wisnieff, Robert L
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Burr, Geoffrey W
Kothandaraman, Chandrasekharan
Lam, Chung Hon
Liu, Xiao Hu
Rossnagel, Stephen M
Tyberg, Christy S
Wisnieff, Robert L
description A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_08278155</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>08278155</sourcerecordid><originalsourceid>FETCH-uspatents_grants_082781553</originalsourceid><addsrcrecordid>eNrjZNAISi0oyk8vSszNTUzKSVVIKy1OVSguKSpNLiktSlVIzEtRyE0tychP4WFgTUvMKU7lhdLcDApuriHOHrqlxQWJJal5JcXxQFNAlIGFkbmFoampMRFKANKlKY0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Reprogrammable fuse structure and method</title><source>USPTO Issued Patents</source><creator>Burr, Geoffrey W ; Kothandaraman, Chandrasekharan ; Lam, Chung Hon ; Liu, Xiao Hu ; Rossnagel, Stephen M ; Tyberg, Christy S ; Wisnieff, Robert L</creator><creatorcontrib>Burr, Geoffrey W ; Kothandaraman, Chandrasekharan ; Lam, Chung Hon ; Liu, Xiao Hu ; Rossnagel, Stephen M ; Tyberg, Christy S ; Wisnieff, Robert L ; International Business Machines Corporation</creatorcontrib><description>A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.</description><language>eng</language><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8278155$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64028</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8278155$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Burr, Geoffrey W</creatorcontrib><creatorcontrib>Kothandaraman, Chandrasekharan</creatorcontrib><creatorcontrib>Lam, Chung Hon</creatorcontrib><creatorcontrib>Liu, Xiao Hu</creatorcontrib><creatorcontrib>Rossnagel, Stephen M</creatorcontrib><creatorcontrib>Tyberg, Christy S</creatorcontrib><creatorcontrib>Wisnieff, Robert L</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><title>Reprogrammable fuse structure and method</title><description>A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZNAISi0oyk8vSszNTUzKSVVIKy1OVSguKSpNLiktSlVIzEtRyE0tychP4WFgTUvMKU7lhdLcDApuriHOHrqlxQWJJal5JcXxQFNAlIGFkbmFoampMRFKANKlKY0</recordid><startdate>20121002</startdate><enddate>20121002</enddate><creator>Burr, Geoffrey W</creator><creator>Kothandaraman, Chandrasekharan</creator><creator>Lam, Chung Hon</creator><creator>Liu, Xiao Hu</creator><creator>Rossnagel, Stephen M</creator><creator>Tyberg, Christy S</creator><creator>Wisnieff, Robert L</creator><scope>EFH</scope></search><sort><creationdate>20121002</creationdate><title>Reprogrammable fuse structure and method</title><author>Burr, Geoffrey W ; Kothandaraman, Chandrasekharan ; Lam, Chung Hon ; Liu, Xiao Hu ; Rossnagel, Stephen M ; Tyberg, Christy S ; Wisnieff, Robert L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_082781553</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Burr, Geoffrey W</creatorcontrib><creatorcontrib>Kothandaraman, Chandrasekharan</creatorcontrib><creatorcontrib>Lam, Chung Hon</creatorcontrib><creatorcontrib>Liu, Xiao Hu</creatorcontrib><creatorcontrib>Rossnagel, Stephen M</creatorcontrib><creatorcontrib>Tyberg, Christy S</creatorcontrib><creatorcontrib>Wisnieff, Robert L</creatorcontrib><creatorcontrib>International Business Machines Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Burr, Geoffrey W</au><au>Kothandaraman, Chandrasekharan</au><au>Lam, Chung Hon</au><au>Liu, Xiao Hu</au><au>Rossnagel, Stephen M</au><au>Tyberg, Christy S</au><au>Wisnieff, Robert L</au><aucorp>International Business Machines Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reprogrammable fuse structure and method</title><date>2012-10-02</date><risdate>2012</risdate><abstract>A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_08278155
source USPTO Issued Patents
title Reprogrammable fuse structure and method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T23%3A54%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Burr,%20Geoffrey%20W&rft.aucorp=International%20Business%20Machines%20Corporation&rft.date=2012-10-02&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E08278155%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true