Planarized passivation layer for semiconductor devices

A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a subs...

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Hauptverfasser: Lim, Sin Leng, Kim, In Ki, Park, Jong Sung, Kim, Min Hwan, Lu, Wei
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Sprache:eng
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creator Lim, Sin Leng
Kim, In Ki
Park, Jong Sung
Kim, Min Hwan
Lu, Wei
description A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_08264088</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>08264088</sourcerecordid><originalsourceid>FETCH-uspatents_grants_082640883</originalsourceid><addsrcrecordid>eNrjZDALyEnMSyzKrEpNUShILC7OLEssyczPU8hJrEwtUkjLL1IoTs3NTM7PSylNLgHyUlLLMpNTi3kYWNMSc4pTeaE0N4OCm2uIs4duaXFBYklqXklxfHpRIogysDAyMzGwsDAmQgkAwMcvNA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Planarized passivation layer for semiconductor devices</title><source>USPTO Issued Patents</source><creator>Lim, Sin Leng ; Kim, In Ki ; Park, Jong Sung ; Kim, Min Hwan ; Lu, Wei</creator><creatorcontrib>Lim, Sin Leng ; Kim, In Ki ; Park, Jong Sung ; Kim, Min Hwan ; Lu, Wei ; GLOBALFOUNDRIES Singapore Pte. Ltd</creatorcontrib><description>A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.</description><language>eng</language><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8264088$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,309,781,803,886,64044</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8264088$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lim, Sin Leng</creatorcontrib><creatorcontrib>Kim, In Ki</creatorcontrib><creatorcontrib>Park, Jong Sung</creatorcontrib><creatorcontrib>Kim, Min Hwan</creatorcontrib><creatorcontrib>Lu, Wei</creatorcontrib><creatorcontrib>GLOBALFOUNDRIES Singapore Pte. Ltd</creatorcontrib><title>Planarized passivation layer for semiconductor devices</title><description>A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZDALyEnMSyzKrEpNUShILC7OLEssyczPU8hJrEwtUkjLL1IoTs3NTM7PSylNLgHyUlLLMpNTi3kYWNMSc4pTeaE0N4OCm2uIs4duaXFBYklqXklxfHpRIogysDAyMzGwsDAmQgkAwMcvNA</recordid><startdate>20120911</startdate><enddate>20120911</enddate><creator>Lim, Sin Leng</creator><creator>Kim, In Ki</creator><creator>Park, Jong Sung</creator><creator>Kim, Min Hwan</creator><creator>Lu, Wei</creator><scope>EFH</scope></search><sort><creationdate>20120911</creationdate><title>Planarized passivation layer for semiconductor devices</title><author>Lim, Sin Leng ; Kim, In Ki ; Park, Jong Sung ; Kim, Min Hwan ; Lu, Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_082640883</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Lim, Sin Leng</creatorcontrib><creatorcontrib>Kim, In Ki</creatorcontrib><creatorcontrib>Park, Jong Sung</creatorcontrib><creatorcontrib>Kim, Min Hwan</creatorcontrib><creatorcontrib>Lu, Wei</creatorcontrib><creatorcontrib>GLOBALFOUNDRIES Singapore Pte. Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lim, Sin Leng</au><au>Kim, In Ki</au><au>Park, Jong Sung</au><au>Kim, Min Hwan</au><au>Lu, Wei</au><aucorp>GLOBALFOUNDRIES Singapore Pte. Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Planarized passivation layer for semiconductor devices</title><date>2012-09-11</date><risdate>2012</risdate><abstract>A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.</abstract><oa>free_for_read</oa></addata></record>
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title Planarized passivation layer for semiconductor devices
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-14T11%3A06%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Lim,%20Sin%20Leng&rft.aucorp=GLOBALFOUNDRIES%20Singapore%20Pte.%20Ltd&rft.date=2012-09-11&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E08264088%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true