Method of manufacturing strained-silicon semiconductor device

A method for fabricating a strained-silicon semiconductor device to ameliorate undesirable variation in selectively grown epitaxial film thickness. The layout or component configuration for the proposed semiconductor device is evaluated to determine areas of relatively light or dense population in o...

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Bibliographische Detailangaben

Hauptverfasser:	Chen, Yun-Hsiu, Jang, Syun-Ming, Tsai, Pang-Yen
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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