Method for forming a nonvolatile memory cell comprising a reduced height vertical diode

2 A method for forming a nonvolatile memory cell is provided that includes: (1) forming a rail-shaped first conductor above a substrate, (2) forming a rail-shaped second conductor above the first conductor, and (3) forming a substantially vertical first pillar disposed between the first conductor an...

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Hauptverfasser:	Herner, Scott Brad, Radigan, Steven J
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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