Thin film interlayer in cadmium telluride thin film photovoltaic devices and methods of manufacturing the same

Thin film interlayer in cadmium telluride thin film photovoltaic devices and methods of manufacturing the same

A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate l...

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Hauptverfasser: Frey, Jonathan Mack, Gossmann, Robert Dwayne, Sadeghi, Mehran, Feldman-Peabody, Scott Daniel, Drayton, Jennifer A, Kaydanov, Victor
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Sprache:eng
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creator Frey, Jonathan Mack
Gossmann, Robert Dwayne
Sadeghi, Mehran
Feldman-Peabody, Scott Daniel
Drayton, Jennifer A
Kaydanov, Victor
description A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices.
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title Thin film interlayer in cadmium telluride thin film photovoltaic devices and methods of manufacturing the same
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