Compound semiconductor substrate, semiconductor device, and processes for producing them
10 2 10 2 10 2 10 2 A compound semiconductor substrate according to the present invention is comprised of a Group III nitride and has a surface layer containing a chloride of not less than 200×10atoms/cmand not more than 12000×10atoms/cmin terms of Cl and an oxide of not less than 3.0 at % and not m...
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