Method for producing a semiconductor wafer
2 A method for producing a semiconductor wafer. The method includes placing the semiconductor wafer in a cutout in a carrier. Both sides of the semiconductor wafer are polished between an upper and a lower polishing plate with a polishing agent until the thickness of the center of the semiconductor...
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| creator | Roettger, Klaus Heier, Gerhard Heilmaier, Alexander |
| description | 2 A method for producing a semiconductor wafer. The method includes placing the semiconductor wafer in a cutout in a carrier. Both sides of the semiconductor wafer are polished between an upper and a lower polishing plate with a polishing agent until the thickness of the center of the semiconductor wafer is less than the thickness of the carrier and from 10 μm to 30 μm of semiconductor wafer material is removed. The polishing agent contains 0.1 to 0.4% by weight of SiOand 0.1 to 0.9% by weight of an alkaline component. |
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| source | USPTO Issued Patents |
| title | Method for producing a semiconductor wafer |
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