Photomask used in fabrication of semiconductor device

Photomask used in fabrication of semiconductor device

Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different sh...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kim, Bong-Cheol, Lee, Dae-Youp, Lee, Jae-Han, Kim, Eun-Sung, Son, Byeong-Hwan
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Kim, Bong-Cheol
Lee, Dae-Youp
Lee, Jae-Han
Kim, Eun-Sung
Son, Byeong-Hwan
description Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_08241820</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>08241820</sourcerecordid><originalsourceid>FETCH-uspatents_grants_082418203</originalsourceid><addsrcrecordid>eNrjZDANyMgvyc9NLM5WKC1OTVHIzFNIS0wqykxOLMnMz1PIT1MoTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwMLIxNDCyMCYCCUAT8MuQA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Photomask used in fabrication of semiconductor device</title><source>USPTO Issued Patents</source><creator>Kim, Bong-Cheol ; Lee, Dae-Youp ; Lee, Jae-Han ; Kim, Eun-Sung ; Son, Byeong-Hwan</creator><creatorcontrib>Kim, Bong-Cheol ; Lee, Dae-Youp ; Lee, Jae-Han ; Kim, Eun-Sung ; Son, Byeong-Hwan ; Samsung Electronics Co., Ltd</creatorcontrib><description>Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.</description><language>eng</language><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8241820$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,309,781,803,886,64043</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8241820$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kim, Bong-Cheol</creatorcontrib><creatorcontrib>Lee, Dae-Youp</creatorcontrib><creatorcontrib>Lee, Jae-Han</creatorcontrib><creatorcontrib>Kim, Eun-Sung</creatorcontrib><creatorcontrib>Son, Byeong-Hwan</creatorcontrib><creatorcontrib>Samsung Electronics Co., Ltd</creatorcontrib><title>Photomask used in fabrication of semiconductor device</title><description>Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZDANyMgvyc9NLM5WKC1OTVHIzFNIS0wqykxOLMnMz1PIT1MoTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwMLIxNDCyMCYCCUAT8MuQA</recordid><startdate>20120814</startdate><enddate>20120814</enddate><creator>Kim, Bong-Cheol</creator><creator>Lee, Dae-Youp</creator><creator>Lee, Jae-Han</creator><creator>Kim, Eun-Sung</creator><creator>Son, Byeong-Hwan</creator><scope>EFH</scope></search><sort><creationdate>20120814</creationdate><title>Photomask used in fabrication of semiconductor device</title><author>Kim, Bong-Cheol ; Lee, Dae-Youp ; Lee, Jae-Han ; Kim, Eun-Sung ; Son, Byeong-Hwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_082418203</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Kim, Bong-Cheol</creatorcontrib><creatorcontrib>Lee, Dae-Youp</creatorcontrib><creatorcontrib>Lee, Jae-Han</creatorcontrib><creatorcontrib>Kim, Eun-Sung</creatorcontrib><creatorcontrib>Son, Byeong-Hwan</creatorcontrib><creatorcontrib>Samsung Electronics Co., Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Bong-Cheol</au><au>Lee, Dae-Youp</au><au>Lee, Jae-Han</au><au>Kim, Eun-Sung</au><au>Son, Byeong-Hwan</au><aucorp>Samsung Electronics Co., Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Photomask used in fabrication of semiconductor device</title><date>2012-08-14</date><risdate>2012</risdate><abstract>Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_08241820
source USPTO Issued Patents
title Photomask used in fabrication of semiconductor device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T10%3A50%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kim,%20Bong-Cheol&rft.aucorp=Samsung%20Electronics%20Co.,%20Ltd&rft.date=2012-08-14&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E08241820%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true