Fuse link structures using film stress for programming and methods of manufacture

A method of forming a programmable fuse structure includes forming at least one shallow trench isolation (STI) in a substrate, forming an e-fuse over the at least one STI and depositing an interlevel dielectric (ILD) layer over the e-fuse. Additionally, the method includes removing at least a portio...

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Bibliographische Detailangaben

Hauptverfasser:	Barth, Karl W, Gambino, Jeffrey P, Lee, Tom C, Petrarca, Kevin S
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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