Semiconductor integrated circuit device

A semiconductor integrated circuit memory device includes a gate line that extends in a first direction, an active region adjacent to a first end of the gate line and that extends in a second direction, a silicide layer formed on a top surface of the active region, on a top surface of the gate line,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Shin, Dong Suk, Chang, Chong-Kwang
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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