Laser beam formatting module and method for fabricating semiconductor dies using same

According to one exemplary embodiment, a laser beam formatting module for use in a lithographic system to fabricate a semiconductor wafer comprises an aperture plate having, for example, a circular aperture and capable of being situated between a laser source and a target, and a lens assembly, in a light path between the aperture plate and the target. The laser beam formatting module can produce a substantially uniform laser beam intensity across a target during fabrication of a semiconductor wafer in a laser-produced plasma (LPP) lithographic process using, for example, extreme ultraviolet light (EUV). In one embodiment, a laser beam formatting module improves energy conversion efficiency, reduces out-of-band radiation emission, avoids heating of reflective optics, and eliminates the need for an out-of-band radiation filter.