Non-contact etch annealing of strained layers

Non-contact etch annealing of strained layers

The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor materia...

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Hauptverfasser: Malik, Igor J, Kang, Sien G, Fuerfanger, Martin, Kirk, Harry, Flat, Ariel, Current, Michael Ira, Ong, Philip James
Format: Patent
Sprache:eng
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creator Malik, Igor J
Kang, Sien G
Fuerfanger, Martin
Kirk, Harry
Flat, Ariel
Current, Michael Ira
Ong, Philip James
description The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.
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title Non-contact etch annealing of strained layers
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