Nonvolatile memory device for preventing a source line bouncing phenomenon

A nonvolatile memory device includes a memory cell array configured to include cell strings coupled between respective bit lines and a source line, a unilateral element coupled to the source line, and a negative voltage generation unit coupled to the unilateral element and configured to generate a n...

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Bibliographische Detailangaben
1. Verfasser: Koo, Cheul Hee
Format: Patent
Sprache:eng
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