Nonvolatile memory device for preventing a source line bouncing phenomenon
A nonvolatile memory device includes a memory cell array configured to include cell strings coupled between respective bit lines and a source line, a unilateral element coupled to the source line, and a negative voltage generation unit coupled to the unilateral element and configured to generate a n...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A nonvolatile memory device includes a memory cell array configured to include cell strings coupled between respective bit lines and a source line, a unilateral element coupled to the source line, and a negative voltage generation unit coupled to the unilateral element and configured to generate a negative voltage. |
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