Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.

Bibliographische Detailangaben

Hauptverfasser:	Li, Shijian, Ramaswamy, Kartik, Hanawa, Hiroji, Cho, Seon-Mee, Gallo, Biagio, Choi, Dongwon, Foad, Majeed A
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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