Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
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| creator | Li, Shijian Ramaswamy, Kartik Hanawa, Hiroji Cho, Seon-Mee Gallo, Biagio Choi, Dongwon Foad, Majeed A |
| description | Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction. |
| format | Patent |
| fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_08168519</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>08168519</sourcerecordid><originalsourceid>FETCH-uspatents_grants_081685193</originalsourceid><addsrcrecordid>eNqNiz0KwlAQhNNYiHqHvYBgECXWolha2MsaN8nC-2N3X5HCu_uiHsBiGL7hm3n1ujpUj8DekyjHAJ_45DAY2gSebIhPyMqhB4SUhSAKBEJx4xeVHbdFVUKNYfIcjiRQJhsI2gH9oyAHI-Hy1SwdtqTLatahU1r9elHB-XQ7XtZZExoF03svONWmqffNrj5s_1DeL5hJng</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces</title><source>USPTO Issued Patents</source><creator>Li, Shijian ; Ramaswamy, Kartik ; Hanawa, Hiroji ; Cho, Seon-Mee ; Gallo, Biagio ; Choi, Dongwon ; Foad, Majeed A</creator><creatorcontrib>Li, Shijian ; Ramaswamy, Kartik ; Hanawa, Hiroji ; Cho, Seon-Mee ; Gallo, Biagio ; Choi, Dongwon ; Foad, Majeed A ; Applied Materials, Inc</creatorcontrib><description>Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.</description><language>eng</language><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8168519$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64015</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8168519$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Li, Shijian</creatorcontrib><creatorcontrib>Ramaswamy, Kartik</creatorcontrib><creatorcontrib>Hanawa, Hiroji</creatorcontrib><creatorcontrib>Cho, Seon-Mee</creatorcontrib><creatorcontrib>Gallo, Biagio</creatorcontrib><creatorcontrib>Choi, Dongwon</creatorcontrib><creatorcontrib>Foad, Majeed A</creatorcontrib><creatorcontrib>Applied Materials, Inc</creatorcontrib><title>Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces</title><description>Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNiz0KwlAQhNNYiHqHvYBgECXWolha2MsaN8nC-2N3X5HCu_uiHsBiGL7hm3n1ujpUj8DekyjHAJ_45DAY2gSebIhPyMqhB4SUhSAKBEJx4xeVHbdFVUKNYfIcjiRQJhsI2gH9oyAHI-Hy1SwdtqTLatahU1r9elHB-XQ7XtZZExoF03svONWmqffNrj5s_1DeL5hJng</recordid><startdate>20120501</startdate><enddate>20120501</enddate><creator>Li, Shijian</creator><creator>Ramaswamy, Kartik</creator><creator>Hanawa, Hiroji</creator><creator>Cho, Seon-Mee</creator><creator>Gallo, Biagio</creator><creator>Choi, Dongwon</creator><creator>Foad, Majeed A</creator><scope>EFH</scope></search><sort><creationdate>20120501</creationdate><title>Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces</title><author>Li, Shijian ; Ramaswamy, Kartik ; Hanawa, Hiroji ; Cho, Seon-Mee ; Gallo, Biagio ; Choi, Dongwon ; Foad, Majeed A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_081685193</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Li, Shijian</creatorcontrib><creatorcontrib>Ramaswamy, Kartik</creatorcontrib><creatorcontrib>Hanawa, Hiroji</creatorcontrib><creatorcontrib>Cho, Seon-Mee</creatorcontrib><creatorcontrib>Gallo, Biagio</creatorcontrib><creatorcontrib>Choi, Dongwon</creatorcontrib><creatorcontrib>Foad, Majeed A</creatorcontrib><creatorcontrib>Applied Materials, Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, Shijian</au><au>Ramaswamy, Kartik</au><au>Hanawa, Hiroji</au><au>Cho, Seon-Mee</au><au>Gallo, Biagio</au><au>Choi, Dongwon</au><au>Foad, Majeed A</au><aucorp>Applied Materials, Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces</title><date>2012-05-01</date><risdate>2012</risdate><abstract>Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.</abstract><oa>free_for_read</oa></addata></record> |
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| source | USPTO Issued Patents |
| title | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T00%3A44%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Li,%20Shijian&rft.aucorp=Applied%20Materials,%20Inc&rft.date=2012-05-01&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E08168519%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |