Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor
A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in...
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| creator | Coolbaugh, Douglas D Eshun, Ebenezer E Gebreselasie, Ephrem G He, Zhong-Xiang Ho, Herbert Lei Kim, Deok-kee Kothandaraman, Chandrasekharan Moy, Dan Rassel, Robert Mark Safran, John Matthew Stein, Kenneth Jay Robson, Norman Whitelaw Wang, Ping-Chuan Yan, Hongwen |
| description | A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in part simultaneously upon an isolation region laterally separated from the active region within the semiconductor substrate. The field effect device includes a gate dielectric comprising a high dielectric constant dielectric material and a gate electrode comprising a metal material. The at least one of the fuse structure, anti-fuse structure and resistor structure includes a pad dielectric comprising the same material as the gate dielectric, and optionally, also a fuse, anti-fuse or resistor that may comprise the same metal material as the gate electrode. |
| format | Patent |
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The field effect device includes a gate dielectric comprising a high dielectric constant dielectric material and a gate electrode comprising a metal material. 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The field effect device includes a gate dielectric comprising a high dielectric constant dielectric material and a gate electrode comprising a metal material. The at least one of the fuse structure, anti-fuse structure and resistor structure includes a pad dielectric comprising the same material as the gate dielectric, and optionally, also a fuse, anti-fuse or resistor that may comprise the same metal material as the gate electrode.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor |
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