Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices

A method for forming power semiconductor devices having an inter-electrode dielectric (IPD) layer inside a trench includes providing a semiconductor substrate with a trench, lining the sidewalls and bottom of the trench with a first layer of dielectric material, filling the trench with a first layer...

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Bibliographische Detailangaben

Hauptverfasser:	Grebs, Thomas E, Ridley, Rodney S, Sapp, Steven P, Wilson, Peter H, Sani, Babak S, Dolny, Gary M, Mytych, John, Losee, Becky, Selsley, Adam, Kocon, Christopher B
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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