Manufacturing method of semiconductor device having underfill resin formed without void between semiconductor chip and wiring board

Manufacturing method of semiconductor device having underfill resin formed without void between semiconductor chip and wiring board

A manufacturing method of a semiconductor device includes a film state underfill resin adhering step wherein film state underfill resin in a semi-cured state is adhered on the first surface of the board main body without forming a gap between the first surface of the board main body and the pad; a f...

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Hauptverfasser: Oi, Kiyoshi, Kurihara, Takashi
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creator Oi, Kiyoshi
Kurihara, Takashi
description A manufacturing method of a semiconductor device includes a film state underfill resin adhering step wherein film state underfill resin in a semi-cured state is adhered on the first surface of the board main body without forming a gap between the first surface of the board main body and the pad; a flattening step wherein an upper surface of the film state underfill resin is flattened; a chip connecting step wherein the semiconductor chip is pressed onto the upper surface of the film state underfill resin after the flattening step so that the semiconductor chip is flip chip connected to the pad; and an underfill resin forming step wherein the film state underfill resin is cured so that the underfill resin is formed between the semiconductor chip and the wiring board.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_08138018</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>08138018</sourcerecordid><originalsourceid>FETCH-uspatents_grants_081380183</originalsourceid><addsrcrecordid>eNqNjTEOgkAQRWksjHqHuYAJhIbeaGzs7M2wOwuTwAzZnYUDeHHFWFlZveb997fF84aSAzrLkaWDkaxXDxog0chOxWdnGsHTzI6gx3m1sniKgYcBIiUWCBpH8rDwe5wNZmUPLdlCJD8d1_MEKKv7-WsVo98Xm4BDosOXuwIu5_vpesxpQiOx9Ogiriibqm7Kqqn_UF6HAUxp</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Manufacturing method of semiconductor device having underfill resin formed without void between semiconductor chip and wiring board</title><source>USPTO Issued Patents</source><creator>Oi, Kiyoshi ; Kurihara, Takashi</creator><creatorcontrib>Oi, Kiyoshi ; Kurihara, Takashi ; Shinko Electric Industries Co., Ltd</creatorcontrib><description>A manufacturing method of a semiconductor device includes a film state underfill resin adhering step wherein film state underfill resin in a semi-cured state is adhered on the first surface of the board main body without forming a gap between the first surface of the board main body and the pad; a flattening step wherein an upper surface of the film state underfill resin is flattened; a chip connecting step wherein the semiconductor chip is pressed onto the upper surface of the film state underfill resin after the flattening step so that the semiconductor chip is flip chip connected to the pad; and an underfill resin forming step wherein the film state underfill resin is cured so that the underfill resin is formed between the semiconductor chip and the wiring board.</description><language>eng</language><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8138018$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8138018$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Oi, Kiyoshi</creatorcontrib><creatorcontrib>Kurihara, Takashi</creatorcontrib><creatorcontrib>Shinko Electric Industries Co., Ltd</creatorcontrib><title>Manufacturing method of semiconductor device having underfill resin formed without void between semiconductor chip and wiring board</title><description>A manufacturing method of a semiconductor device includes a film state underfill resin adhering step wherein film state underfill resin in a semi-cured state is adhered on the first surface of the board main body without forming a gap between the first surface of the board main body and the pad; a flattening step wherein an upper surface of the film state underfill resin is flattened; a chip connecting step wherein the semiconductor chip is pressed onto the upper surface of the film state underfill resin after the flattening step so that the semiconductor chip is flip chip connected to the pad; and an underfill resin forming step wherein the film state underfill resin is cured so that the underfill resin is formed between the semiconductor chip and the wiring board.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNjTEOgkAQRWksjHqHuYAJhIbeaGzs7M2wOwuTwAzZnYUDeHHFWFlZveb997fF84aSAzrLkaWDkaxXDxog0chOxWdnGsHTzI6gx3m1sniKgYcBIiUWCBpH8rDwe5wNZmUPLdlCJD8d1_MEKKv7-WsVo98Xm4BDosOXuwIu5_vpesxpQiOx9Ogiriibqm7Kqqn_UF6HAUxp</recordid><startdate>20120320</startdate><enddate>20120320</enddate><creator>Oi, Kiyoshi</creator><creator>Kurihara, Takashi</creator><scope>EFH</scope></search><sort><creationdate>20120320</creationdate><title>Manufacturing method of semiconductor device having underfill resin formed without void between semiconductor chip and wiring board</title><author>Oi, Kiyoshi ; Kurihara, Takashi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_081380183</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Oi, Kiyoshi</creatorcontrib><creatorcontrib>Kurihara, Takashi</creatorcontrib><creatorcontrib>Shinko Electric Industries Co., Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Oi, Kiyoshi</au><au>Kurihara, Takashi</au><aucorp>Shinko Electric Industries Co., Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacturing method of semiconductor device having underfill resin formed without void between semiconductor chip and wiring board</title><date>2012-03-20</date><risdate>2012</risdate><abstract>A manufacturing method of a semiconductor device includes a film state underfill resin adhering step wherein film state underfill resin in a semi-cured state is adhered on the first surface of the board main body without forming a gap between the first surface of the board main body and the pad; a flattening step wherein an upper surface of the film state underfill resin is flattened; a chip connecting step wherein the semiconductor chip is pressed onto the upper surface of the film state underfill resin after the flattening step so that the semiconductor chip is flip chip connected to the pad; and an underfill resin forming step wherein the film state underfill resin is cured so that the underfill resin is formed between the semiconductor chip and the wiring board.</abstract><oa>free_for_read</oa></addata></record>
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title Manufacturing method of semiconductor device having underfill resin formed without void between semiconductor chip and wiring board
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T02%3A05%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Oi,%20Kiyoshi&rft.aucorp=Shinko%20Electric%20Industries%20Co.,%20Ltd&rft.date=2012-03-20&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E08138018%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true