Reduction of silicide formation temperature on SiGe containing substrates

A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an...

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Hauptverfasser:	Cabral, Jr, Cyril, Carruthers, Roy A, Chen, Jia, Detavernier, Christopher, Harper, James M, Lavoie, Christian
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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