Low on-resistance lateral double-diffused MOS device

A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first...

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Bibliographische Detailangaben

Hauptverfasser:	Huang, Hsueh-I, Chu, Chien-Wen, Lin, Cheng-Chi, Lien, Shih-Chin, Yeh, Chin-Pen, Wu, Shyi-Yuan
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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