Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques

During the patterning of sophisticated metallization systems, a damaged surface portion of a sensitive low-k dielectric material may be efficiently replaced by a well-controlled dielectric material, thereby enabling an adaptation of the material characteristics and/or the layer thickness of the repl...

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Bibliographische Detailangaben

Hauptverfasser:	Streck, Christof, Kahlert, Volker, Iacoponi, John A
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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