Silicon precursors and method for low temperature CVD of silicon-containing films

1234 1234 1234 1234 Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a -Si-Y-Si- bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R, R, R, and Rare each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R, R, R, and Rmay be the same or different from one another; X, X, X, and Xare each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X, X, X, and Xmay be the same or different from one another.