Lightly doped silicon carbide wafer and use thereof in high power devices

14 −314 −3A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×10cm, and a concentration of transition metals impurities less than 5×10cm. Intrinsic defects in the crystal are minimised. The intrinsi...

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Hauptverfasser:	Ellison, Alexandre, Magnusson, Björn, Vehanen, Asko, Stephani, Dietrich, Mitlehner, Heinz, Friedrichs, Peter
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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