Flash memory devices with memory cells strings including dummy transistors with selective threshold voltages

Flash memory devices include a first memory cell string including a plurality of serially-connected memory cells and first and second serially-connected dummy transistors configured to couple the serially-connected memory cells to a bit line and a second memory cell string including a plurality of s...

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Bibliographische Detailangaben

Hauptverfasser:	Kang, Myoung Gon, Park, Kitae
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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