Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

An element larger than silicon is ion-implanted to a contact liner in an N-channel region to break constituent atoms of the contact liner in the N-channel region. An element larger than silicon is ion-implanted to the contact liner in a P-channel region to break constituent atoms of the contact line...

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Hauptverfasser: Kanegae, Kenshi, Yamada, Masaru
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Sprache:eng
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creator Kanegae, Kenshi
Yamada, Masaru
description An element larger than silicon is ion-implanted to a contact liner in an N-channel region to break constituent atoms of the contact liner in the N-channel region. An element larger than silicon is ion-implanted to the contact liner in a P-channel region to break constituent atoms of the contact liner, oxygen or the like is ion-implanted. Thereafter, heat treatment is performed to cause shrinkage of the contact liner in the N-channel region to form an n-channel contact liner, and to cause expansion of the contact liner in the P-channel region to form a p-channel contact liner.
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title Semiconductor device and manufacturing method thereof
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