Solution-processed inorganic films for organic thin film transistors

A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60° C. to 225° C. The sol-gel film made by the method, and an organic thin-film...

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Hauptverfasser:	Namdas, Ebinazar Benjamin, Cahyadi, Tommy, Mhaisalkar, G. Subodh, Lee, Pooi See, Chen, Zhikuan, Lam, Yeng Ming, Song, Lixin
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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