Method of programming, erasing and repairing a memory device

A method of programming and erasing a memory device is provided. The memory device includes first and second electrodes and a switching layer therebetween. A first on-state resistance characteristic of the memory device is provided in programming the memory device by application of a first voltage t...

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Hauptverfasser:	Kaza, Swaroop, Haddad, Sameer
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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