Semiconductor device
The semiconductor device of the present invention includes a first conductive type semiconductor layer; a second conductive type source region formed in a surface layer portion of the semiconductor layer; a groove formed by digging in the source region from a surface thereof; an insulating film lami...
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| creator | Hino, Masaki |
| description | The semiconductor device of the present invention includes a first conductive type semiconductor layer; a second conductive type source region formed in a surface layer portion of the semiconductor layer; a groove formed by digging in the source region from a surface thereof; an insulating film laminated on the semiconductor layer to cover a surface of the semiconductor layer; a contact hole penetrating through the insulating film in a layer thickness direction at least at a position facing the groove; a wiring formed on the insulating film; and a contact plug embedded in the contact hole so that a bottom portion thereof enters the groove to electrically connect the wiring and the source. |
| format | Patent |
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| language | eng |
| recordid | cdi_uspatents_grants_08067798 |
| source | USPTO Issued Patents |
| title | Semiconductor device |
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