Interconnection architecture for semiconductor device
An interconnection architecture, for a semiconductor device (having regions arranged to include at least an inner region, an intermediate region located at least aside the inner region, and an outer region located at least on a side of the intermediate region opposite to the inner region, includes:...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | An interconnection architecture, for a semiconductor device (having regions arranged to include at least an inner region, an intermediate region located at least aside the inner region, and an outer region located at least on a side of the intermediate region opposite to the inner region, includes: one or more pairs of first and second signal lines, each pair extending from the inner region into the intermediate region; first portions and second portions of the first and second signal lines being parallel, respectively, the first portions being located in the inner region; the first and second portion of at least the first signal line not being collinear; and an intra-pair line-spacing, d(i), for each pair including the following magnitudes, d2 in the inner region, and d2′ in the intermediate region, where d2 |
---|