Simulation model creating method, mask data creating method and semiconductor device manufacturing method

A simulation model creating method computes, for measurement results of a line width of a resist pattern formed with varied an exposure amount and focus value, a permissible fluctuation range of the pattern line width from a distribution of the exposure amount and a distribution of the focus value;...

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Bibliographische Detailangaben

Hauptverfasser:	Mimotogi, Shoji, Asano, Masafumi
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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