Method of manufacturing a trench transistor having a heavy body region
A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each...
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| Format: | Patent |
| Sprache: | eng |
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