Power semiconductor component having a topmost metallization layer

A power semiconductor component and a method for the production of a power semiconductor component are disclosed. According to one embodiment of the invention, a topmost metallization region that is provided is formed in a manner extended laterally and outside contacts formed, in such a way that, as...

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Bibliographische Detailangaben

Hauptverfasser:	Maynollo, Josef, Detzel, Thomas
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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