Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device

In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer pr...

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Bibliographische Detailangaben

Hauptverfasser:	Futase, Takuya, Saeki, Tomonori, Kashi, Mieko
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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