Transistor having a high-k metal gate stack and a compressively stressed channel

Transistor having a high-k metal gate stack and a compressively stressed channel

In a manufacturing flow for adapting the band gap of the semiconductor material with respect to the work function of a metal-containing gate electrode material, a strain-inducing material may be deposited to provide an additional strain component in the channel region. For instance, a layer stack wi...

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Hauptverfasser: Griebenow, Uwe, Hoentschel, Jan, Frohberg, Kai
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Sprache:eng
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creator Griebenow, Uwe
Hoentschel, Jan
Frohberg, Kai
description In a manufacturing flow for adapting the band gap of the semiconductor material with respect to the work function of a metal-containing gate electrode material, a strain-inducing material may be deposited to provide an additional strain component in the channel region. For instance, a layer stack with silicon/carbon, silicon and silicon/germanium may be used for providing the desired threshold voltage for a metal gate while also providing compressive strain in the channel region.
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title Transistor having a high-k metal gate stack and a compressively stressed channel
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