Method and apparatus for curing coated film
2 2 According to the method and the apparatus for curing a coated film of the present invention, since an ionization radiation is applied after the Oconcentration in the near-surface layer within 1 mm above the surface of the coated film is adjusted to 1000 ppm or lower, the coated film can be suffi...
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creator | Nojo, Kazuhiko Endo, Shuichi Sano, Daisuke |
description | 2 2 According to the method and the apparatus for curing a coated film of the present invention, since an ionization radiation is applied after the Oconcentration in the near-surface layer within 1 mm above the surface of the coated film is adjusted to 1000 ppm or lower, the coated film can be sufficiently cured by irradiation of the ionization radiation. In other words, according to the method and the apparatus for curing a coated film of the present invention, since the Oconcentration in a thin near-surface layer on the surface of a coated film is decreased, the coated film can be sufficiently cured by irradiation of an ionization radiation. As a result, the amount of inert gas supplied upon irradiation of an ionization radiation can be reduced, and downsizing and cost reduction of equipment can be achieved. |
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fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_08007874</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>08007874</sourcerecordid><originalsourceid>FETCH-uspatents_grants_080078743</originalsourceid><addsrcrecordid>eNrjZND2TS3JyE9RSMwD4oKCxKLEktJihbT8IoXk0qLMvHSF5PzEktQUhbTMnFweBta0xJziVF4ozc2g4OYa4uyhW1pcAFSUV1Icn16UCKIMLAwMzC3MTYyJUAIAHtQqEA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for curing coated film</title><source>USPTO Issued Patents</source><creator>Nojo, Kazuhiko ; Endo, Shuichi ; Sano, Daisuke</creator><creatorcontrib>Nojo, Kazuhiko ; Endo, Shuichi ; Sano, Daisuke ; FUJIFILM Corporation</creatorcontrib><description>2 2 According to the method and the apparatus for curing a coated film of the present invention, since an ionization radiation is applied after the Oconcentration in the near-surface layer within 1 mm above the surface of the coated film is adjusted to 1000 ppm or lower, the coated film can be sufficiently cured by irradiation of the ionization radiation. In other words, according to the method and the apparatus for curing a coated film of the present invention, since the Oconcentration in a thin near-surface layer on the surface of a coated film is decreased, the coated film can be sufficiently cured by irradiation of an ionization radiation. As a result, the amount of inert gas supplied upon irradiation of an ionization radiation can be reduced, and downsizing and cost reduction of equipment can be achieved.</description><language>eng</language><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8007874$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8007874$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nojo, Kazuhiko</creatorcontrib><creatorcontrib>Endo, Shuichi</creatorcontrib><creatorcontrib>Sano, Daisuke</creatorcontrib><creatorcontrib>FUJIFILM Corporation</creatorcontrib><title>Method and apparatus for curing coated film</title><description>2 2 According to the method and the apparatus for curing a coated film of the present invention, since an ionization radiation is applied after the Oconcentration in the near-surface layer within 1 mm above the surface of the coated film is adjusted to 1000 ppm or lower, the coated film can be sufficiently cured by irradiation of the ionization radiation. In other words, according to the method and the apparatus for curing a coated film of the present invention, since the Oconcentration in a thin near-surface layer on the surface of a coated film is decreased, the coated film can be sufficiently cured by irradiation of an ionization radiation. As a result, the amount of inert gas supplied upon irradiation of an ionization radiation can be reduced, and downsizing and cost reduction of equipment can be achieved.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZND2TS3JyE9RSMwD4oKCxKLEktJihbT8IoXk0qLMvHSF5PzEktQUhbTMnFweBta0xJziVF4ozc2g4OYa4uyhW1pcAFSUV1Icn16UCKIMLAwMzC3MTYyJUAIAHtQqEA</recordid><startdate>20110830</startdate><enddate>20110830</enddate><creator>Nojo, Kazuhiko</creator><creator>Endo, Shuichi</creator><creator>Sano, Daisuke</creator><scope>EFH</scope></search><sort><creationdate>20110830</creationdate><title>Method and apparatus for curing coated film</title><author>Nojo, Kazuhiko ; Endo, Shuichi ; Sano, Daisuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_080078743</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Nojo, Kazuhiko</creatorcontrib><creatorcontrib>Endo, Shuichi</creatorcontrib><creatorcontrib>Sano, Daisuke</creatorcontrib><creatorcontrib>FUJIFILM Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nojo, Kazuhiko</au><au>Endo, Shuichi</au><au>Sano, Daisuke</au><aucorp>FUJIFILM Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for curing coated film</title><date>2011-08-30</date><risdate>2011</risdate><abstract>2 2 According to the method and the apparatus for curing a coated film of the present invention, since an ionization radiation is applied after the Oconcentration in the near-surface layer within 1 mm above the surface of the coated film is adjusted to 1000 ppm or lower, the coated film can be sufficiently cured by irradiation of the ionization radiation. In other words, according to the method and the apparatus for curing a coated film of the present invention, since the Oconcentration in a thin near-surface layer on the surface of a coated film is decreased, the coated film can be sufficiently cured by irradiation of an ionization radiation. As a result, the amount of inert gas supplied upon irradiation of an ionization radiation can be reduced, and downsizing and cost reduction of equipment can be achieved.</abstract><oa>free_for_read</oa></addata></record> |
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title | Method and apparatus for curing coated film |
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