Mask etch plasma reactor with cathode providing a uniform distribution of etch rate

A plasma reactor for etching a workpiece such as a rectangular or square mask, includes a vacuum chamber having a ceiling and a sidewall and a workpiece support pedestal within the chamber including a cathode having a surface for supporting a workpiece, the surface comprising plural respective zones...

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Hauptverfasser:	Lewington, Richard, Grimbergen, Michael N, Nguyen, Khiem K, Bivens, Darin, Chandrachood, Madhavi R, Kumar, Ajay
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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