Method of programming multi-layer chalcogenide devices

Method of programming multi-layer chalcogenide devices

A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the elec...

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Hauptverfasser: Sandoval, Regino, Kostylev, Sergey A, Czubatyj, Wolodymyr, Lowrey, Tyler
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Sprache:eng
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creator Sandoval, Regino
Kostylev, Sergey A
Czubatyj, Wolodymyr
Lowrey, Tyler
description A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the electrical signal alters an electrical characteristic of a layer remote from one of the terminals. In one embodiment, the layer remote from the terminal is a chalcogenide material and the electrical characteristic is resistance. In another embodiment, an electrical characteristic of the layer in contact with the terminal is also altered. The alteration of an electrical characteristic may be caused by a transformation of a chalcogenide material from one structural state to another structural state.
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title Method of programming multi-layer chalcogenide devices
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