Methods for fabricating thin film III-V compound solar cell

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied t...

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Hauptverfasser: Pan, Noren, Hillier, Glen, Vu, Duy Phach, Tatavarti, Rao, Youtsey, Christopher, McCallum, David, Martin, Genevieve
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creator Pan, Noren
Hillier, Glen
Vu, Duy Phach
Tatavarti, Rao
Youtsey, Christopher
McCallum, David
Martin, Genevieve
description The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
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fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07994419</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07994419</sourcerecordid><originalsourceid>FETCH-uspatents_grants_079944193</originalsourceid><addsrcrecordid>eNrjZLD2TS3JyE8pVkjLL1JIS0wqykxOLMnMS1coycjMU0jLzMlV8PT01A1TSM7PLcgvzUtRKM7PSSxSSE7NyeFhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzS0sTE0NKYCCUAJf4vmg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Methods for fabricating thin film III-V compound solar cell</title><source>USPTO Issued Patents</source><creator>Pan, Noren ; Hillier, Glen ; Vu, Duy Phach ; Tatavarti, Rao ; Youtsey, Christopher ; McCallum, David ; Martin, Genevieve</creator><creatorcontrib>Pan, Noren ; Hillier, Glen ; Vu, Duy Phach ; Tatavarti, Rao ; Youtsey, Christopher ; McCallum, David ; Martin, Genevieve ; MicroLink Devices, Inc</creatorcontrib><description>The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.</description><language>eng</language><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7994419$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7994419$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Pan, Noren</creatorcontrib><creatorcontrib>Hillier, Glen</creatorcontrib><creatorcontrib>Vu, Duy Phach</creatorcontrib><creatorcontrib>Tatavarti, Rao</creatorcontrib><creatorcontrib>Youtsey, Christopher</creatorcontrib><creatorcontrib>McCallum, David</creatorcontrib><creatorcontrib>Martin, Genevieve</creatorcontrib><creatorcontrib>MicroLink Devices, Inc</creatorcontrib><title>Methods for fabricating thin film III-V compound solar cell</title><description>The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZLD2TS3JyE8pVkjLL1JIS0wqykxOLMnMS1coycjMU0jLzMlV8PT01A1TSM7PLcgvzUtRKM7PSSxSSE7NyeFhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwNzS0sTE0NKYCCUAJf4vmg</recordid><startdate>20110809</startdate><enddate>20110809</enddate><creator>Pan, Noren</creator><creator>Hillier, Glen</creator><creator>Vu, Duy Phach</creator><creator>Tatavarti, Rao</creator><creator>Youtsey, Christopher</creator><creator>McCallum, David</creator><creator>Martin, Genevieve</creator><scope>EFH</scope></search><sort><creationdate>20110809</creationdate><title>Methods for fabricating thin film III-V compound solar cell</title><author>Pan, Noren ; Hillier, Glen ; Vu, Duy Phach ; Tatavarti, Rao ; Youtsey, Christopher ; McCallum, David ; Martin, Genevieve</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_079944193</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Pan, Noren</creatorcontrib><creatorcontrib>Hillier, Glen</creatorcontrib><creatorcontrib>Vu, Duy Phach</creatorcontrib><creatorcontrib>Tatavarti, Rao</creatorcontrib><creatorcontrib>Youtsey, Christopher</creatorcontrib><creatorcontrib>McCallum, David</creatorcontrib><creatorcontrib>Martin, Genevieve</creatorcontrib><creatorcontrib>MicroLink Devices, Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pan, Noren</au><au>Hillier, Glen</au><au>Vu, Duy Phach</au><au>Tatavarti, Rao</au><au>Youtsey, Christopher</au><au>McCallum, David</au><au>Martin, Genevieve</au><aucorp>MicroLink Devices, Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods for fabricating thin film III-V compound solar cell</title><date>2011-08-09</date><risdate>2011</risdate><abstract>The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.</abstract><oa>free_for_read</oa></addata></record>
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title Methods for fabricating thin film III-V compound solar cell
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T03%3A25%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Pan,%20Noren&rft.aucorp=MicroLink%20Devices,%20Inc&rft.date=2011-08-09&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07994419%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true