Manufacturing method of semiconductor device

A semiconductor device including a drift layer of a first conductivity type formed on a surface of a semiconductor substrate. A surface of the drift layer has a second area positioned on an outer periphery of a first area. A cell portion formed in the first area includes a first base layer of a seco...

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Bibliographische Detailangaben

Hauptverfasser:	Aida, Satoshi, Kouzuki, Shigeo, Izumisawa, Masaru, Yoshioka, Hironori
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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