Ion implantation apparatus and a method

Ion implantation apparatus and a method

A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral e...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Glavish, Hilton, Ryding, Geoffrey, Smick, Theodore H, Purser, Kenneth Harry
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Glavish, Hilton
Ryding, Geoffrey
Smick, Theodore H
Purser, Kenneth Harry
description A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_07989784</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>07989784</sourcerecordid><originalsourceid>FETCH-uspatents_grants_079897843</originalsourceid><addsrcrecordid>eNrjZFD3zM9TyMwtyEnMK0ksyQRyEgsKEosSS0qLFRLzUhQSFXJTSzLyU3gYWNMSc4pTeaE0N4OCm2uIs4duaXFBYklqXklxfHpRIogyMLe0sDS3MDEmQgkAd_ko4A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Ion implantation apparatus and a method</title><source>USPTO Issued Patents</source><creator>Glavish, Hilton ; Ryding, Geoffrey ; Smick, Theodore H ; Purser, Kenneth Harry</creator><creatorcontrib>Glavish, Hilton ; Ryding, Geoffrey ; Smick, Theodore H ; Purser, Kenneth Harry ; Twin Creeks Technologies, Inc</creatorcontrib><description>A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.</description><language>eng</language><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7989784$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64012</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7989784$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Glavish, Hilton</creatorcontrib><creatorcontrib>Ryding, Geoffrey</creatorcontrib><creatorcontrib>Smick, Theodore H</creatorcontrib><creatorcontrib>Purser, Kenneth Harry</creatorcontrib><creatorcontrib>Twin Creeks Technologies, Inc</creatorcontrib><title>Ion implantation apparatus and a method</title><description>A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZFD3zM9TyMwtyEnMK0ksyQRyEgsKEosSS0qLFRLzUhQSFXJTSzLyU3gYWNMSc4pTeaE0N4OCm2uIs4duaXFBYklqXklxfHpRIogyMLe0sDS3MDEmQgkAd_ko4A</recordid><startdate>20110802</startdate><enddate>20110802</enddate><creator>Glavish, Hilton</creator><creator>Ryding, Geoffrey</creator><creator>Smick, Theodore H</creator><creator>Purser, Kenneth Harry</creator><scope>EFH</scope></search><sort><creationdate>20110802</creationdate><title>Ion implantation apparatus and a method</title><author>Glavish, Hilton ; Ryding, Geoffrey ; Smick, Theodore H ; Purser, Kenneth Harry</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_079897843</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Glavish, Hilton</creatorcontrib><creatorcontrib>Ryding, Geoffrey</creatorcontrib><creatorcontrib>Smick, Theodore H</creatorcontrib><creatorcontrib>Purser, Kenneth Harry</creatorcontrib><creatorcontrib>Twin Creeks Technologies, Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Glavish, Hilton</au><au>Ryding, Geoffrey</au><au>Smick, Theodore H</au><au>Purser, Kenneth Harry</au><aucorp>Twin Creeks Technologies, Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ion implantation apparatus and a method</title><date>2011-08-02</date><risdate>2011</risdate><abstract>A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_07989784
source USPTO Issued Patents
title Ion implantation apparatus and a method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T23%3A12%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Glavish,%20Hilton&rft.aucorp=Twin%20Creeks%20Technologies,%20Inc&rft.date=2011-08-02&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E07989784%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true