Semiconductor device

There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-...

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Bibliographische Detailangaben

Hauptverfasser:	Morino, Naozumi, Hiraiwa, Atsushi, Oku, Kazutoshi, Ito, Toshiaki, Igarashi, Motoshige, Sasaki, Takayuki, Sugiyama, Masao, Yanagita, Hiroshi, Watarai, Shinichi
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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