Semiconductor device

Semiconductor device

There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-...

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Hauptverfasser: Morino, Naozumi, Hiraiwa, Atsushi, Oku, Kazutoshi, Ito, Toshiaki, Igarashi, Motoshige, Sasaki, Takayuki, Sugiyama, Masao, Yanagita, Hiroshi, Watarai, Shinichi
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creator Morino, Naozumi
Hiraiwa, Atsushi
Oku, Kazutoshi
Ito, Toshiaki
Igarashi, Motoshige
Sasaki, Takayuki
Sugiyama, Masao
Yanagita, Hiroshi
Watarai, Shinichi
description There is provided a technology which allows improvements in manufacturing yield and product reliability in a semiconductor device having a triple well structure. A shallow p-type well is formed in a region different from respective regions in a p-type substrate where a deep n-type well, a shallow p-type well, and a shallow n-type well are formed. A p-type diffusion tap formed in the shallow p-type well is wired to a p-type diffusion tap formed in a shallow n-type well in the deep n-type well using an interconnection in a second layer. The respective gate electrodes of an nMIS and a pMIS each formed in the deep n-type well are coupled to the respective drain electrodes of an nMIS and a pMIS each formed in the substrate using an interconnection in a second or higher order layer.
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title Semiconductor device
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