Memory device and fabrication method thereof

A method of forming a memory device, where a first insulator layer and a charge trapping layer may be formed on a substrate, and at least one of the first insulator layer and charge trapping layer may be patterned to form patterned areas. A second insulation layer and a conductive layer may be forme...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Shin, Yoo-Cheol, Choi, Jeong-Hyuk, Hur, Sung-Hoi
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!