Memory configuration of a composite memory device

Memory configuration of a composite memory device

The present invention is related to a composite flash memory device comprises a plural sector flash memory array which is divided to plural sector that is a minimum erasing unit of the flash memory device, a flash memory array storing control commands which control a total system of the composite fl...

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Hauptverfasser: Fukuda, Minoru, Nakanishi, Hiroaki, Matsudaira, Kunio, Matsuo, Masahiro, Abe, Hirohisa
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Sprache:eng
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creator Fukuda, Minoru
Nakanishi, Hiroaki
Matsudaira, Kunio
Matsuo, Masahiro
Abe, Hirohisa
description The present invention is related to a composite flash memory device comprises a plural sector flash memory array which is divided to plural sector that is a minimum erasing unit of the flash memory device, a flash memory array storing control commands which control a total system of the composite flash memory device and/or the only composite flash memory device in and sharing I/O line of the plural sector flash memory array, the read operation of the flash memory array is enable when the plural sector flash memory array is gained access.
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title Memory configuration of a composite memory device
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